Dielectric function of quantum dots in the strong confinement regime

被引：43

作者：

Holmstrom, P. ^{[1
]}

Thylen, L. ^{[1
,2
]}

Bratkovsky, A. ^{[2
]}

机构：

[1] Royal Inst Technol KTH, Lab Photon & Microwave Engn, SE-16440 Kista, Sweden

[2] Hewlett Packard Labs, Palo Alto, CA 94304 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 06期

基金：

瑞典研究理事会;

关键词：

absorption coefficients; colloids; dielectric function; gallium arsenide; ground states; III-V semiconductors; indium compounds; semiconductor quantum dots; GAIN-ASSISTED PROPAGATION; SEMICONDUCTORS; THRESHOLD; ELECTRON;

D O I：

10.1063/1.3309343

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The complex dielectric function of quantum dots (QDs) with a core-shell structure is modeled in the strong confinement regime. These results should be useful for the design of negative epsilon optical metamaterials, where the gain due to QDs could be an essential ingredient. Using the dielectric function it is also shown that conventional expressions for the gain substantially overestimate it for narrow linewidths.

引用

页数：7

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