The radiation-induced defects production in p-type silicon doped by impurities of transitional elements

In this work the results of studies of defect formation kinetics of radiation centers E-v + 0.25 eV (divacancy), E-v + 0.36 eV (complex "divacancy + oxygen + carbon") and E-v + 0.44 eV ("vacancy + interstitial boron") are presented for various doping level impurities M (Au, Cd, Pt, Ir, Rh, Zn, Cu, Ni). It was shown that with increasing concentration of impurities the concentration of radiation center E-v + 0.25 eV, decreases, but concentration of centers E-v + 0.36 eV and E-v + 0.44 eV increases. Observed results can be explained by radiation decay of deep level impurity + self-interstitial and deep level impurity + vacancy complexes formed by thermaldiffusion doping. As a result, the released self-interstitial atoms actively take part in quasichemical reactions, significantly affecting the creation of radiation defect. Dependence of the generation efficiency of radiation centers on sizes of covalent radius of the atom impurity M is observed.