Graphene Q-switched Er,Yb:GdAl3(BO3)4 laser at 1550 nm

被引：16

作者：

Gorbachenya, Konstantin ^{[1
]}

Kisel, Viktor ^{[1
]}

Yasukevich, Anatoly ^{[1
]}

Loiko, Pavel ^{[2
]}

Mateos, Xavier ^{[3
,4
]}

Maltsev, Viktor ^{[5
]}

Leonyuk, Nikolai ^{[5
]}

Aguilo, Magdalena ^{[3
]}

Diaz, Francesc ^{[3
]}

Griebner, Uwe ^{[4
]}

Petrov, Valentin ^{[4
]}

Kuleshov, Nikolai ^{[1
]}

机构：

[1] Belarusian Natl Tech Univ, Ctr Opt Mat & Technol, 65-17 Nezavisimosti Ave, Minsk 220013, BELARUS

[2] ITMO Univ, Kronverkskiy Pr 49, St Petersburg 197101, Russia

[3] URV, Fis & Cristallog Mat & Nanomat FiCMA FiCNA, Campus Sescelades,C Marcelli Domingo S-N, E-43007 Tarragona, Spain

[4] Max Born Inst Nonlinear Opt & Short Pulse Spect, Max Born Str 2a, D-12489 Berlin, Germany

[5] Moscow MV Lomonosov State Univ, Dept Crystallog & Crystal Chem, GSP 2, Moscow 119992, Russia

来源：

APPLIED OPTICS | 2017年 / 56卷 / 16期

关键词：

DIODE-PUMPED ER; SATURABLE ABSORBER; CRYSTAL; ENERGY; YB;

D O I：

10.1364/AO.56.004745

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A single-layer graphene saturable absorber is employed for passive Q-switching of an Er, Yb:GdAl3(BO3)(4) (Er, Yb:GdAB) compact laser, representing the first Er-doped oxoborate laser Q-switched by graphene. This laser is based on a c-cut 1.8 at. % Er3+, 15 at. % Yb3+ : GdAB crystal diode-pumped at 0.976 mu m. It generates a maximum average output power of 360 mW at 1.55 mu m with a slope efficiency of 23% (with respect to the incident power). Stable similar to 1 mu J/130 ns pulses are achieved at a repetition rate of 400 kHz. This result represents, to the best of our knowledge, the shortest pulse duration ever achieved in bulk Er lasers Q-switched by 2D materials. Graphene is a promising material for generating nanosecond pulses at high repetition rates (MHz range) in Er-doped oxoborate lasers emitting in the eye-safe range at 1.5-1.7 mu m. (C) 2017 Optical Society of America

引用

页码：4745 / 4749

页数：5

共 27 条

[1] Atomic-Layer Graphene as a Saturable Absorber for Ultrafast Pulsed Lasers [J].

Bao, Qiaoliang ;

Zhang, Han ;

Wang, Yu ;

Ni, Zhenhua ;

Yan, Yongli ;

Shen, Ze Xiang ;

Loh, Kian Ping ;

Tang, Ding Yuan .

ADVANCED FUNCTIONAL MATERIALS, 2009, 19 (19) :3077-3083

[2] Spectroscopic and laser properties of Er3+:Yb3+:LuAl3(BO3)4 crystal at 1.5-1.6 μm [J].

Chen, Yujin ;

Lin, Yanfu ;

Huang, Jianhua ;

Gong, Xinghong ;

Luo, Zundu ;

Huang, Yidong .

OPTICS EXPRESS, 2010, 18 (13) :13700-13707

[3] Thermal lensing in diode-pumped ytterbium lasers -: Part II:: Evaluation of quantum efficiencies and thermo-optic coefficients [J].

Chénais, S ;

Balembois, F ;

Druon, F ;

Lucas-Leclin, G ;

Georges, P .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2004, 40 (09) :1235-1243

[4] Raman spectrum of graphene and graphene layers [J].

Ferrari, A. C. ;

Meyer, J. C. ;

Scardaci, V. ;

Casiraghi, C. ;

Lazzeri, M. ;

Mauri, F. ;

Piscanec, S. ;

Jiang, D. ;

Novoselov, K. S. ;

Roth, S. ;

Geim, A. K. .

PHYSICAL REVIEW LETTERS, 2006, 97 (18)

[5] Passively Q-switched Er,Yb:GdAl3(BO3)4 laser with single-walled carbon nanotube based saturable absorber [J].

Gorbachenya, K. N. ;

Kisel, V. E. ;

Yasukevich, A. S. ;

Prudnikova, M. B. ;

Maltsev, V. V. ;

Leonyuk, N. I. ;

Choi, S. Y. ;

Rotermund, F. ;

Kuleshov, N. V. .

LASER PHYSICS LETTERS, 2017, 14 (03)

[6] Eye-safe 1.55 μm passively Q-switched Er,Yb:GdAl3(BO3)4 diode-pumped laser [J].

Gorbachenya, K. N. ;

Kisel, V. E. ;

Yasukevich, A. S. ;

Maltsev, V. V. ;

Leonyuk, N. I. ;

Kuleshov, N. V. .

OPTICS LETTERS, 2016, 41 (05) :918-921

[7] Highly efficient continuous-wave diode-pumped Er, Yb:GdAl3(BO3)4 laser [J].

Gorbachenya, K. N. ;

Kisel, V. E. ;

Yasukevich, A. S. ;

Maltsev, V. V. ;

Leonyuk, N. I. ;

Kuleshov, N. V. .

OPTICS LETTERS, 2013, 38 (14) :2446-2448

[8] Nd3+→Yb3+ energy transfer in the YAl3(BO3)4 nonlinear laser crystal -: art. no. 035118 [J].

Jaque, D ;

Ramirez, MO ;

Bausá, LE ;

Solé, JG ;

Cavalli, E ;

Speghini, A ;

Bettinelli, M .

PHYSICAL REVIEW B, 2003, 68 (03)

[9] Development and characterization of Yb-Er laser glass for high average power laser diode pumping [J].

Karlsson, G ;

Laurell, F ;

Tellefsen, J ;

Denker, B ;

Galagan, B ;

Osiko, V ;

Sverchkov, S .

APPLIED PHYSICS B-LASERS AND OPTICS, 2002, 75 (01) :41-46

[10] Passively Q-switched microchip Er, Yb:YAl3(BO3)4 diode-pumped laser [J].

Kisel, V. E. ;

Gorbachenya, K. N. ;

Yasukevich, A. S. ;

Ivashko, A. M. ;

Kuleshov, N. V. ;

Maltsev, V. V. ;

Leonyuk, N. I. .

OPTICS LETTERS, 2012, 37 (13) :2745-2747

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