Thermoelectric properties of electrodeposited CuNi alloys on Si

Thin films with the composition of the constantan alloy (a solid solution with 35 to 50 wt. % of Ni in Cu) have a high-thermoelectric power, which allows the fabrication of very sensitive heat-flux sensors based on planar technology. In this article, the thermoelectric properties of CuxNi100-x thin films electrodeposited on silicon were studied as a function of the composition, temperature, and thickness. The electrodeposition of thin layers on silicon is an important step for the integration of thermal sensors with semiconductor technology. The CuxNi100-x alloys were electrodeposited potentiostatically at room temperature, from a citrate electrolyte containing both copper and nickel sulfates. The layer composition was controlled by the applied potential in the range from pure copper (at -0.4 V/SCE) up to a solid solution of about 25 wt. % Cu in Ni (at -1.2 V/SCE). Extremely high values of thermoelectric power were measured for very thin layers of Cu40Ni60 on Si, showing a strong influence of the substrate. By considering the system as a thermoelectric bilayer and extracting the contribution of the semiconductor, thermopower values for the Cu40Ni60 alloys comparable to the expected ones for constantan wires were obtained. (C) 2003 American Institute of Physics.