Reactive pulsed laser deposition assisted by RF discharge plasma

被引：0
|
作者：
Basillais, A [1 ]
Mathias, J [1 ]
Boulmer-Leborgne, C [1 ]
Perrière, J [1 ]
机构：
[1] ESPEO, GREMI, F-45067 Orleans 2, France
来源：
HIGH-POWER LASER ABLATION III | 2000年 / 4065卷
关键词：
pulsed laser deposition; thin films; oxygen contamination; aluminum nitride; emission spectroscopy;
D O I：
10.1117/12.407326
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
AIN nitride films are grown by reactive pulsed laser ablation of aluminum target in N-2 atmosphere. The influence of process parameters such as N-2 pressure and laser fluence is investigated. Films are characterized by Rutherford Backscattering Spectroscopy, Nuclear Reaction Analysis, X Ray Diffraction and X Ray Photoelectron Spectroscopy. O contamination appears in the film and its origin is discussed. To enhance N-2 dissociation, a RF discharge device is coupled to the deposition chamber. Its effect on thin film composition is studied. Emission spectroscopy is performed in order to find the best RF working point for N-2 molecule dissociation and to understand species transport from the target towards the substrate as a function of process parameters. Thin film with a stoichiometry near to Al1N1 can be obtained with low O contamination working with 6 J/cm(2) laser fluence, 0.01 mbar N-2 with RF discharge added.
引用
收藏
页码：242 / 248
页数：7
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