Enhancing the noise performance of monolithic microwave integrated circuit-based low noise amplifiers through the use of a discrete preamplifying transistor

被引：4

作者：

McCulloch, Mark A. ^{[1
]}

Melhuish, Simon J. ^{[1
]}

Piccirillo, Lucio ^{[1
]}

机构：

[1] Univ Manchester, Jodrell Bank Ctr Astrophys, Sch Phys & Astron, Oxford Rd, Manchester M13 9PL, Lancs, England

来源：

JOURNAL OF ASTRONOMICAL TELESCOPES INSTRUMENTS AND SYSTEMS | 2015年 / 1卷 / 01期

关键词：

InP high electron mobility transistor; low noise amplifiers; microwave integrated circuit; monolithic microwave integrated circuit; radio astronomy;

D O I：

10.1117/1.JATIS.1.1.016001

中图分类号：

V [航空、航天];

学科分类号：

08 ; 0825 ;

摘要：

An approach to enhancing the noise performance of an InP monolithic microwave integrated circuit (MMIC)-based low noise amplifiers (LNA) through the use of a discrete 100-nm gate length InP high electron mobility transistor is outlined. This LNA, known as a transistor in front of MMIC (T + MMIC) LNA, possesses a gain in excess of 40 dB and an average noise temperature of 9.4 K across the band 27 to 33 GHz at a physical temperature of 8 K. This compares favorably with 14.5 K for an LNA containing an equivalent MMIC. A simple advanced design system model offering further insights into the operation of the LNA is also presented and the LNA is compared with the current state-of-the-art Planck LFI LNAs. (C) 2015 Society of Photo-Optical Instrumentation Engineers (SPIE)

引用

页数：6

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