Rashba coupling induced spin accumulation in two-dimensional domain wall

被引：4

作者：

Phirouznia, A. ^{[1
]}

Ghamari, F. ^{[1
]}

机构：

[1] Azarbaijan Univ Tarbiat Moallem, Dept Phys, Tabriz 53714161, Iran

来源：

EUROPEAN PHYSICAL JOURNAL B | 2010年 / 74卷 / 03期

关键词：

THIN-FILM; CO WIRES; MAGNETORESISTANCE; RESISTIVITY; RESISTANCE; SPINTRONICS; ELECTRONICS; TRANSPORT;

D O I：

10.1140/epjb/e2010-00099-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Non-equilibrium spin accumulation in two-dimensional domain wall (DW) in the presence of external electric field and Rashba type spin-orbit coupling within the Boltzmann semi-classical model is investigated. Transport and relaxation of spin polarized current in the DW is governed by spin-flip rates which are determined by the Rashba interaction and magnetic impurities. Numerical results show that at low impurity densities and nonadiabatic transport regimes, the Rashba interaction significantly enhances spin polarization of conduction electrons inside the DW.

引用

页码：357 / 362

页数：6

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