Current-carrying capacity of double-wall carbon nanotubes

被引：26
作者：
Moon, Sunkyung
Song, Woon
Kim, Nam
Lee, Joon Sung
Na, Pil Sun
Lee, Soon-Gul
Park, Jongwan
Jung, Myung-Hwa
Lee, Hyun-Woo
Kang, Kicheon
Lee, Cheol Jin
Kim, Jinhee [1 ]
机构：
[1] Korea Res Inst Stand & Sci, Taejon 305600, South Korea
[2] Korea Univ, Dept Appl Phys, Chungnam 339800, South Korea
[3] Natl Nanofab Ctr, Taejon 305806, South Korea
[4] Korea Basic Sci Inst, Quantum Mat Res Team, Taejon 305333, South Korea
[5] Pohang Univ Sci & Technol, Dept Phys, Pohang 790784, South Korea
[6] Chonnam Natl Univ, Dept Phys, Kwangju 500757, South Korea
[7] Korea Univ, Sch Elect Engn, Seoul 136713, South Korea
来源：
NANOTECHNOLOGY | 2007年 / 18卷 / 23期
关键词：
D O I：
10.1088/0957-4484/18/23/235201
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We have studied electrical transport characteristics of individual double-wall carbon nanotubes ( DWNT) under high bias voltages. As the bias voltage applied to the carbon nanotubes increases, the outermost shell of the DWNTs broke down sequentially, which enabled us to determine the current-carrying capacity of each shell. The maximum current-carrying capacity per shell was about 150 mu A, which is well above that of any other previous reports.
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页数：4
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