Electrical characteristics of diodes fabricated with organic semiconductors

被引：42
作者：
Liang, GR [1 ]
Cui, TH [1 ]
Varahramyan, K [1 ]
机构：
[1] Louisiana Tech Univ, Inst Micromfg, Ruston, LA 71272 USA
来源：
MICROELECTRONIC ENGINEERING | 2003年 / 65卷 / 03期
关键词：
organic diode; organic semiconductor; poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate); 1,4,5,8-naphthalene-tetracarboxylic-; dianhydride; polypyrrole;
D O I：
10.1016/S0167-9317(02)00901-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Organic diodes have been fabricated using 1,4,5,8-naphthalene-tetracarboxylic-dianhydride (NTCDA), poly(3,4-ethylenedioxythiophene) (PEDT), doped with poly(styrenesulfonate) (PSS) and polypyrrole (PPy) by simple and low-cost spin coating and thermal evaporation techniques. The current-voltage (I-V) characteristics have been investigated at room temperature, showing the breakdown voltages of about 9 V and the rectification ratios in excess of 4.1 X 10(3) for both NTCDA/PPy and NTCDA/(PEDT/PSS) diodes. The significant influence of acetone treatmetiflbn I-V characteristics is observed for NTCDA/PPy diodes. (C) 2002 Elsevier Science B.V. All rights reserved.
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页码：279 / 284
页数：6
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