共 40 条
Probing the highly transparent and conducting SnOx/Au/SnOx structure for futuristic TCO applications
被引:56
作者:
Sharma, V.
[1
]
Vyas, R.
[2
]
Bazylewski, P.
[3
]
Chang, G. S.
[4
]
Asokan, K.
[5
]
Sachdev, K.
[1
,6
]
机构:
[1] Malaviya Natl Inst Technol, Dept Phys, Jaipur 302017, Rajasthan, India
[2] Jaipur Natl Univ, Sch Basic Sci, Dept Phys, Jaipur 302017, Rajasthan, India
[3] Univ Western Ontario, Dept Phys & Astron, London, ON N6A 3K7, Canada
[4] Univ Saskatchewan, Dept Phys & Engn Phys, Saskatoon, SK S7N 5E2, Canada
[5] Interuniv Accelerator Ctr, Mat Sci Div, New Delhi 110067, India
[6] Malaviya Natl Inst Technol, Mat Res Ctr, Jaipur 302017, Rajasthan, India
来源:
基金:
加拿大创新基金会;
加拿大自然科学与工程研究理事会;
关键词:
INDIUM-TIN-OXIDE;
P-TYPE ZNO;
THIN-FILMS;
ELECTRICAL-PROPERTIES;
LAYER;
TEMPERATURE;
ELECTRODES;
DEPENDENCE;
SNO2;
D O I:
10.1039/c5ra24422f
中图分类号:
O6 [化学];
学科分类号:
0703 ;
摘要:
A SnOx/Au/SnOx transparent conductive oxide (TCO) multilayered film was fabricated with a total thickness of 75 nm using both e-beam and thermal evaporation techniques. X-ray diffraction confirms the amorphous nature of SnOx with a crystalline peak attributed to the presence of diffraction from the Au (111) plane. The morphological studies using atomic force microscopy (AFM) and scanning electron microscopy (SEM) revealed a smooth top layer of the sandwich structure. A Rutherford backscattering spectrum has been used to probe the thickness of individual TCO layers, and reveals an oxygen deficient structure in the SnOx layer. X-ray absorption spectroscopy (XAS) and X-ray emission spectroscopy (XES) measurements confirm the formation an SnO-rich phase and the presence of oxygen vacancies. The specimen exhibited resistivity and sheet resistance of 3.9 x 10(-4) Omega cm and 52 U sq. (-1), respectively, with an optical transparency of 83% beyond 475 nm. The superior parameters exhibited by this stacked multilayer are due to relatively lower oxygen concentration in the tin oxide layer, and it is therefore proposed as a necessary ingredient to increase the overall conductivity in metal oxide multilayer thin films.
引用
收藏
页码:29135 / 29141
页数:7
相关论文