Probing the highly transparent and conducting SnOx/Au/SnOx structure for futuristic TCO applications

被引:56
作者
Sharma, V. [1 ]
Vyas, R. [2 ]
Bazylewski, P. [3 ]
Chang, G. S. [4 ]
Asokan, K. [5 ]
Sachdev, K. [1 ,6 ]
机构
[1] Malaviya Natl Inst Technol, Dept Phys, Jaipur 302017, Rajasthan, India
[2] Jaipur Natl Univ, Sch Basic Sci, Dept Phys, Jaipur 302017, Rajasthan, India
[3] Univ Western Ontario, Dept Phys & Astron, London, ON N6A 3K7, Canada
[4] Univ Saskatchewan, Dept Phys & Engn Phys, Saskatoon, SK S7N 5E2, Canada
[5] Interuniv Accelerator Ctr, Mat Sci Div, New Delhi 110067, India
[6] Malaviya Natl Inst Technol, Mat Res Ctr, Jaipur 302017, Rajasthan, India
基金
加拿大创新基金会; 加拿大自然科学与工程研究理事会;
关键词
INDIUM-TIN-OXIDE; P-TYPE ZNO; THIN-FILMS; ELECTRICAL-PROPERTIES; LAYER; TEMPERATURE; ELECTRODES; DEPENDENCE; SNO2;
D O I
10.1039/c5ra24422f
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A SnOx/Au/SnOx transparent conductive oxide (TCO) multilayered film was fabricated with a total thickness of 75 nm using both e-beam and thermal evaporation techniques. X-ray diffraction confirms the amorphous nature of SnOx with a crystalline peak attributed to the presence of diffraction from the Au (111) plane. The morphological studies using atomic force microscopy (AFM) and scanning electron microscopy (SEM) revealed a smooth top layer of the sandwich structure. A Rutherford backscattering spectrum has been used to probe the thickness of individual TCO layers, and reveals an oxygen deficient structure in the SnOx layer. X-ray absorption spectroscopy (XAS) and X-ray emission spectroscopy (XES) measurements confirm the formation an SnO-rich phase and the presence of oxygen vacancies. The specimen exhibited resistivity and sheet resistance of 3.9 x 10(-4) Omega cm and 52 U sq. (-1), respectively, with an optical transparency of 83% beyond 475 nm. The superior parameters exhibited by this stacked multilayer are due to relatively lower oxygen concentration in the tin oxide layer, and it is therefore proposed as a necessary ingredient to increase the overall conductivity in metal oxide multilayer thin films.
引用
收藏
页码:29135 / 29141
页数:7
相关论文
共 40 条
[1]   Electron transport and defect structure in highly conducting reactively sputtered ultrathin tin oxide films [J].
Bansal, Shikha ;
Pandya, Dinesh K. ;
Kashyap, Subhash C. .
APPLIED PHYSICS LETTERS, 2014, 104 (08)
[2]   INTRINSIC PERFORMANCE LIMITS IN TRANSPARENT CONDUCTING OXIDES [J].
BELLINGHAM, JR ;
PHILLIPS, WA ;
ADKINS, CJ .
JOURNAL OF MATERIALS SCIENCE LETTERS, 1992, 11 (05) :263-265
[3]   Indium tin oxide-free transparent and conductive electrode based on SnOx |Ag| SnOx for organic solar cells [J].
Bou, A. ;
Torchio, Ph ;
Barakel, D. ;
Thierry, F. ;
Sangar, A. ;
Thoulon, P. -Y. ;
Ricci, M. .
JOURNAL OF APPLIED PHYSICS, 2014, 116 (02)
[4]   Flexible organic solar cells using an oxide/metal/oxide trilayer as transparent electrode [J].
Cao, Weiran ;
Zheng, Ying ;
Li, Zhifeng ;
Wrzesniewski, Edward ;
Hammond, William T. ;
Xue, Jiangeng .
ORGANIC ELECTRONICS, 2012, 13 (11) :2221-2228
[5]   Oxygen-vacancy-induced ferromagnetism in undoped SnO2 thin films [J].
Chang, G. S. ;
Forrest, J. ;
Kurmaev, E. Z. ;
Morozovska, A. N. ;
Glinchuk, M. D. ;
McLeod, J. A. ;
Moewes, A. ;
Surkova, T. P. ;
Nguyen Hoa Hong .
PHYSICAL REVIEW B, 2012, 85 (16)
[6]   Intrinsic limit of electrical properties of transparent conductive oxide films [J].
Chen, M ;
Pei, ZL ;
Wang, X ;
Yu, YH ;
Liu, XH ;
Sun, C ;
Wen, LS .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2000, 33 (20) :2538-2548
[7]   Functional thin film coatings incorporating gold nanoparticles in a transparent conducting fluorine doped tin oxide matrix [J].
Chew, Clair K. T. ;
Salcianu, Carmen ;
Bishop, Peter ;
Carmalt, Claire J. ;
Parkin, Ivan P. .
JOURNAL OF MATERIALS CHEMISTRY C, 2015, 3 (05) :1118-1125
[8]   Embedment of nano-sized Ag layer into Ag-doped In2O3 films for use as highly transparent and conductive anode in organic solar cells [J].
Cho, Da-Young ;
Na, Seok-In ;
Chung, Kwun-Bum ;
Kim, Han-Ki .
APPLIED SURFACE SCIENCE, 2015, 347 :88-95
[9]   The conducting tin oxide thin films deposited via atomic layer deposition using Tetrakis-dimethylamino tin and peroxide for transparent flexible electronics [J].
Choi, Dong-won ;
Maeng, W. J. ;
Park, Jin-Seong .
APPLIED SURFACE SCIENCE, 2014, 313 :585-590
[10]  
Cooney TF, 1999, AM MINERAL, V84, P1569