Optical and transport properties of Ti-doped In2O3 thin films prepared by electron beam physical vapour deposition

被引：5
|
作者：
Sanchez-Marcos, J. [1 ]
Ochando, I. M. [1 ]
Galindo, R. Escobar [1 ,2 ]
Martinez-Morillas, R. [1 ]
Prieto, C. [1 ]
机构：
[1] CSIC, Inst Ciencia Mat Madrid, Madrid 28049, Spain
[2] Univ Autonoma Madrid, Ctr Microanal Mat, E-28049 Madrid, Spain
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2010年 / 207卷 / 07期
关键词：
doping; electrical properties; ITO; optical properties; PVD; INDIUM OXIDE;
D O I：
10.1002/pssa.200983717
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ti-doped In2O3 (ITiO) thin films have been prepared by electron beam physical vapour deposition (EB-PVD). Their optical and electrical properties are studied for the obtained compositions. After oxygen annealing all samples show excellent optical transparence; additionally, maximum values for conductivity are obtained for samples with titanium contents near 6 at.%, with typical resistivity values of 4 x 10(-5) Omega cm. Finally, the band-gap energy evolution is studied for the set of samples. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：1549 / 1553
页数：5
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