Thermal conductivity and temperature dependence of linear thermal expansion coefficient of Al4SiC4 sintered bodies prepared by pulse electronic current sintering

被引：35

作者：

Inoue, K ^{[1
]}

Mori, S ^{[1
]}

Yamaguchi, A ^{[1
]}

机构：

[1] Nagoya Inst Technol, Dept Mat Sci & Engn, Showa Ku, Nagoya, Aichi 4668555, Japan

来源：

JOURNAL OF THE CERAMIC SOCIETY OF JAPAN | 2003年 / 111卷 / 05期

关键词：

Al4SiC4; aluminum silicon carbide; compound in the system Al-Si-C; carbide; thermal conductivity; thermal expansion;

D O I：

10.2109/jcersj.111.348

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The thermal conductivity and the temperature dependence of linear thermal expansion coefficient of Al4SiC4 sintered bodies were investigated from room temperature to 1200degreesC. Thermal conductivity decreased with the increase porosity. The thermal conductivity and linear expansion coefficient of highly densitied Al4SiC4 body in a range from room temperature to 1200degreesC were 80 W . m(-1) . K-1 and 7.16 x 10(-6) K-1, respectively.

引用

页码：348 / 351

页数：4

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