TRANSIENTS IN ELECTRIC CIRCUITS OF CAPACITOR CELLS AND WORKABILITY OF SEMICONDUCTOR SWITCHES

被引：3

作者：

Enikeev, R. Sh. ^{[1
]}

Fridman, B. E. ^{[1
]}

机构：

[1] DV Efremov Sci Res Inst Electrophys Apparatus, St Petersburg 196641, Russia

来源：

2009 IEEE PULSED POWER CONFERENCE, VOLS 1 AND 2 | 2009年

关键词：

D O I：

10.1109/PPC.2009.5386285

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The paper presents the results of the study of capacitor cells of capacitive energy storage with a semiconductor switch composed of reverse-switched dynistors (RSD) and power diodes [1]. The authors investigate operation of the switches in the programmable discharge mode and operation into the load of an exploding wire type. It is shown that possible is the occurrence of the reverse voltage on the RSD anodes before their initiation, as well as current pauses in RSD followed by re-discharge of the capacitor through RSD. The prerequisites to the occurrence of switching overvoltages dangerous to the semiconductor structures workability are investigated. Damping of switching overvoltages by snubber circuits and varistors is studied. Operation of diodes with fast and soft recovery in the surge currents and programmable discharge mode is investigated. It is proposed to use soft recovery diodes to reduce the switching overvoltage amplitude. The thermal generation peak of forward Voltage drop was registered on soft recovery diodes to control the heating and the allowable level of current on the semiconductor structures.

引用

页码：382 / 388

页数：7

共 4 条

[1]

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[3]

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