Feasibility analysis of laser action in erbium-doped silicon waveguides

被引：13

作者：

Coffa, S

Libertino, S

Coppola, G

Cutolo, A

机构：

[1] CNR, IMETEM, I-95121 Catania, Italy

[2] Univ Naples Federico II, Dipartimento Ingn Elettron & Telecomunicaz, I-80125 Naples, Italy

[3] Univ Sannio, I-82100 Benevento, Italy

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2000年 / 36卷 / 10期

关键词：

Bragg gratings; DBR; semiconductor laser; Si-based erbium laser;

D O I：

10.1109/3.880662

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors analyze the feasibility of laser action in erbium-doped silicon devices. The recent experimental results on spontaneous light emission at 1.54 mum from erbium-doped silicon diodes and theoretical calculation on Bragg grating technology are used to evaluate the best scenario performances. The effects of processes-induced errors on the threshold conditions are taken into account. They show that laser action in the Er : Si system is feasible.

引用

收藏

页码：1206 / 1213

页数：8

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