Structural studies of ZnS thin films grown on GaAs by RF magnetron sputtering

被引：49

作者：

Gayou, V. L. ^{[1
,2
]}

Salazar-Hernandez, B. ^{[2
]}

Constantino, M. E. ^{[2
]}

Rosendo Andres, E. ^{[3
]}

Diaz, T. ^{[3
]}

Delgado Macuil, R. ^{[1
]}

Rojas Lopez, M. ^{[1
]}

机构：

[1] IPN Tlaxcala, CIBA, Tepetitla De Lardizabal 90700, Tlaxcala, Mexico

[2] Univ Autonoma Estado Morelos, Fac Ciencias Quim & Ingn, Ctr Invest Ingn & Ciencias Aplicadas, Cuernavaca 62210, Morelos, Mexico

[3] Univ Autonoma Puebla, Inst Ciencias, Ctr Invest Disposit Semicond, Puebla 72570, Mexico

来源：

VACUUM | 2010年 / 84卷 / 10期

关键词：

Sputtering; Nanoparticles; ZnS; XRD; AFM; PHOTOLUMINESCENCE PROPERTIES; EPITAXY; NANOPARTICLES; ABSORPTION;

D O I：

10.1016/j.vacuum.2009.10.023

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

X-ray diffraction (XRD) studies of ZnS thin films grown on GaAs (001) substrates at different temperatures by rf magnetron sputtering have been carried out using CuK alpha radiation. XRD analysis reveals that deposited films below 335 degrees C, assumed the zinc blend structure. Samples annealed at above 335 degrees C showed mixed phases of the zinc blend and wurzite structures. Information about crystallite size is obtained from (001), (111) and (104) diffraction peaks. The average crystallite size of the film was determined to be similar to 32 nm using the Scherrer formula. (C) 2009 Elsevier Ltd. All rights reserved.

引用

页码：1191 / 1194

页数：4

共 28 条

[1] Influence of ion sputtering on the surface topography of GaAs [J].

Asomoza, R ;

Merkulova, O ;

Merkulov, A ;

Vidal, MA ;

Salazar, B .

APPLIED SURFACE SCIENCE, 1998, 126 (3-4) :205-212

[2] Synthesis and characterization of sol-gel derived ZnS:Mn2+ nanocrystallites embedded in a silica matrix [J].

Bhattacharjee, B ;

Ganguli, D ;

Iakoubovskii, K ;

Stesmans, A ;

Chaudhuri, S .

BULLETIN OF MATERIALS SCIENCE, 2002, 25 (03) :175-180

[3] Absorption and luminescence of the surface states in ZnS nanoparticles [J].

Chen, W ;

Wang, ZG ;

Lin, ZJ ;

Lin, LY .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (06) :3111-3115

[4] Helicon-wave-excited-plasma sputtering epitaxy of ZnO on sapphire (0001) substrates [J].

Chichibu, SF ;

Yoshida, T ;

Onuma, T ;

Nakanishi, H .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (02) :874-877

[5] MOLECULAR-BEAM EPITAXY OF ZNS USING AN ELEMENTAL S SOURCE [J].

COOK, JW ;

EASON, DB ;

VAUDO, RP ;

SCHETZINA, JF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02) :901-904

[6] MOCVD GROWTH OF NONEPITAXIAL AND EPITAXIAL ZNS THIN-FILMS [J].

FANG, J ;

HOLLOWAY, PH ;

YU, JE ;

JONES, KS ;

PATHANGEY, B ;

BRETTSCHNEIDER, E ;

ANDERSON, TJ .

APPLIED SURFACE SCIENCE, 1993, 70-1 :701-706

[7] ZNS EPITAXY ON SAPPHIRE(110) [J].

GREENBERG, B ;

ZWICKER, WK ;

CADOFF, I .

THIN SOLID FILMS, 1986, 141 (01) :89-97

[8] ZnS thin films grown on Si(100) by XeCl pulsed laser ablation [J].

Hillie, KT ;

Curren, C ;

Swart, HC .

APPLIED SURFACE SCIENCE, 2001, 177 (1-2) :73-77

[9] AFM studies on ZnS thin films grown by atomic layer epitaxy [J].

Ihanus, J ;

Ritala, M ;

Leskela, M ;

Prohaska, T ;

Resch, R ;

Friedbacher, G ;

Grasserbauer, M .

APPLIED SURFACE SCIENCE, 1997, 120 (1-2) :43-50

[10] ZnS:Mn thin-film electroluminescent devices prepared by metalorganic chemical vapor deposition [J].

Kina, H ;

Yamada, Y ;

Maruta, Y ;

Tamura, Y .

JOURNAL OF CRYSTAL GROWTH, 1996, 169 (01) :33-39

← 1 2 3 →