Photoelectric Property Modulation by Nanoconfinement in the Longitude Direction of Short Semiconducting Nanorods

被引：11

作者：

Tang, Chaolong ^{[1
,2
]}

Jiang, Chengming ^{[1
,2
]}

Bi, Sheng ^{[2
]}

Song, Jinhui ^{[1
,2
]}

机构：

[1] Univ Alabama, Dept Met & Mat Engn, Tuscaloosa, AL 35487 USA

[2] Univ Alabama, Ctr Mat Informat Technol MINT, Tuscaloosa, AL 35487 USA

来源：

ACS APPLIED MATERIALS & INTERFACES | 2016年 / 8卷 / 17期

关键词：

nanoconfinement; photoelectric property; 0.5D nanomaterials; AFM; SKPM; ZNO NANOWIRE ARRAYS; ZINC-OXIDE; ULTRAVIOLET PHOTODETECTORS; UV PHOTODETECTORS; THIN-FILMS; FABRICATION; SURFACE; SIZE; PHOTOCONDUCTIVITY; NANOPARTICLES;

D O I：

10.1021/acsami.6b02497

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Photoelectric property change in half-dimensional (0.5D) semiconducting nanomaterials as a function of illumination light intensity and materials geometry has been systematically studied. Through two independent methods, conductive atomic force microscopy (C-AFM) direct current-voltage acquisition and scanning kelvin probe microscopy (SKPM) surface potential mapping, photoelectric property of 0.5D ZnO nanomaterial has been characterized with exceptional behaviors compared with bulk/micro/one-dimensional (1D) nanomaterial. A new model by considering surface effect, quantum effect, and illumination effect has been successfully built, which could more accurately predict the photoelectric characteristics of 0.5D semiconducting nanomaterials. The findings reported in this study could potentially impact three-dimensional (3D) photoelectronics.

引用

页码：11001 / 11007

页数：7

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