Solid-phase epitaxial growth of SrTiO3 thin films on Si(001) substrates at low temperature

被引：3

作者：

Bhuiyan, MNK ^{[1
]}

Kimura, H ^{[1
]}

Tambo, T ^{[1
]}

Tatsuyama, C ^{[1
]}

机构：

[1] Toyama Univ, Fac Engn, Dept Elect & Elect Engn, Toyama 9308555, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2004年 / 43卷 / 11B期

关键词：

SrTiO3; films; Si(001) substrates; solid-phase epitaxy; reflection high-energy electron diffraction; X-ray diffraction; atomic force microscopy;

D O I：

10.1143/JJAP.43.7879

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The solid-phase epitaxial growth of perovskite-type SrTiO3 films on Sr-deposited Si(001) substrates has been studied. Sr deposition on the Si oxide substrate reduces the thickness of the oxide layer and leads to the formation of a Si(001)-Sr(2 x 1) reconstructed surface. Reflection high-energy electron diffraction (RHEED) and X-ray diffraction (XRD) analyses, and atomic force microscopy (AFM) show that the SrTiO3 film grown at 80degreesC is amorphous and after postgrowth annealing at an elevated temperature the SrTiO3 film changes to a crystalline phase and has a smooth surface.

引用

页码：7879 / 7880

页数：2

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