Relaxation dynamics of the metal-semiconductor transition in VO2 thin films

被引：25

作者：

Claassen, J. H. ^{[1
]}

Lu, J. W. ^{[2
]}

West, K. G. ^{[2
]}

Wolf, S. A. ^{[2
,3
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

[2] Univ Virginia, Dept Mat Sci & Engn, Charlottesville, VA 22904 USA

[3] Univ Virginia, Dept Phys, Charlottesville, VA 22904 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 13期

关键词：

semiconductor-metal boundaries; supercooling; vanadium compounds; HARD SUPERCONDUCTORS; VANADIUM; HYSTERESIS; CREEP;

D O I：

10.1063/1.3370353

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The temperature dependent metal-insulator transition in VO2 films displays substantial hysteresis. This is usually attributed to supercooling or superheating in the grains. In the hysteretic region at fixed temperature there is a relaxation of the resistance toward a presumed equilibrium value. We have made careful measurements of this relaxation, and find that it proceeds with a logarithmic dependence on time. If the transformation is thermally activated in individual grains, the log(t) behavior can be explained either by a wide distribution of activation energies U among grains or a dependence of U on the phase of adjacent grains.

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页数：3

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