High-power broad-band superluminescent diode with low spectral modulation at 1.5-μm wavelength

被引：36

作者：

Song, JH ^{[1
]}

Cho, SH

Han, IK

Hu, Y

Heim, PJS

Johnson, FG

Stone, DR

Dagenais, M

机构：

[1] Univ Maryland, Dept Elect & Comp Engn, College Pk, MD 20742 USA

[2] Univ Maryland, Joint Program Adv Elect Mat, College Pk, MD 20742 USA

[3] Lab Phys Sci, College Pk, MD 20740 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2000年 / 12卷 / 07期

关键词：

angled facet; broad-band source; delta doping; superluminescent diode;

D O I：

10.1109/68.853499

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 1.5-mu m wavelength superluminescent light source operating at a heat sink temperature of 13 degrees C with the following properties was realized: 20-mW continuous wave output power, 130-nm spectral bandwidth, and 0.2-dB spectral modulation. This light source consists of an angled facet single-mode waveguide with a rear absorption region. These results were obtained by optimizing the epitaxial design, the waveguide design, and the device mounting.

引用

页码：783 / 785

页数：3

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