High-power broad-band superluminescent diode with low spectral modulation at 1.5-μm wavelength

被引：35
|
作者：
Song, JH [1 ]
Cho, SH
Han, IK
Hu, Y
Heim, PJS
Johnson, FG
Stone, DR
Dagenais, M
机构：
[1] Univ Maryland, Dept Elect & Comp Engn, College Pk, MD 20742 USA
[2] Univ Maryland, Joint Program Adv Elect Mat, College Pk, MD 20742 USA
[3] Lab Phys Sci, College Pk, MD 20740 USA
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2000年 / 12卷 / 07期
关键词：
angled facet; broad-band source; delta doping; superluminescent diode;
D O I：
10.1109/68.853499
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 1.5-mu m wavelength superluminescent light source operating at a heat sink temperature of 13 degrees C with the following properties was realized: 20-mW continuous wave output power, 130-nm spectral bandwidth, and 0.2-dB spectral modulation. This light source consists of an angled facet single-mode waveguide with a rear absorption region. These results were obtained by optimizing the epitaxial design, the waveguide design, and the device mounting.
引用
收藏
页码：783 / 785
页数：3
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