Deposits removal and hydrogen release on co-deposited films exposed to O-ICR and O-GDC plasmas in HT-7

被引:4
作者
Hu, J. S. [1 ]
Li, J. G.
Ashikawa, N.
Tokunaga, K.
Noda, N.
Yoshida, N.
机构
[1] Chinese Acad Sci, Inst Plasma Phys, Hefei 230031, Anhui, Peoples R China
[2] Natl Inst Fus Sci, Gifu 5095292, Japan
[3] Kyushu Univ, Appl Mech Res Inst, Kasuga, Fukuoka 8168580, Japan
关键词
D O I
10.1088/0741-3335/49/4/006
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
A few new results of oxidation wall conditionings for deposits removal and hydrogen release were directly obtained on exposure of co-deposited films to O-ICR or O-GDC plasmas in HT-7. After the O-ICR or O-GDC treatments, the deposits were partially removed and deuterium retention was reduced. D-2 release from samples was reduced by a factor of 2-3, and the ratio of D/C decreased whereas that of O/C increased. The removal rates of C in various oxidation wall conditionings were about 10(18)-10(19) Cm-2 min(-1), which approached the estimated carbon deposited rates, of about 5.2 x 10(18)Cm(-2) min(-1), on the tested samples. The He/O-ICR was more effective on the deposits removal and hydrogen ( deuterium) release than O-GDC. And O-ICR was more effective on the surface facing main plasma than on that facing SOL plasma, whereas O-GDC possibly has uniform effectivity on both tested surfaces.
引用
收藏
页码:421 / 434
页数:14
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