Controlled Growth of Large-Area Bilayer Tungsten Diselenides with Lateral P-N Junctions

被引:46
作者
Mandyam, Srinivas V. [1 ]
Zhao, Meng-Qiang [1 ]
Das, Paul Masih [1 ]
Zhang, Qicheng [1 ]
Price, Christopher C. [2 ]
Gao, Zhaoli [1 ]
Shenoy, Vivek B. [2 ]
Drndic, Marija [1 ]
Johnson, Alan T. Charlie [1 ]
机构
[1] Univ Penn, Dept Phys & Astron, 209 South 33rd St, Philadelphia, PA 19104 USA
[2] Univ Penn, Dept Mat Sci & Engn, 3231 Walnut St, Philadelphia, PA 19104 USA
基金
美国国家科学基金会;
关键词
two-dimensional materials; controlled growth; bilayer WSe2; growth promoter; monolayer-bilayer junction; VAPOR-DEPOSITION GROWTH; STACKED 2D MATERIALS; GRAIN-BOUNDARIES; MONOLAYER; HETEROSTRUCTURES; MOS2; GRAPHENE; WSE2; THICKNESS; RAMAN;
D O I
10.1021/acsnano.9b04453
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Bilayer two-dimensional (2D) van der Waals (vdW) materials are attracting increasing attention due to their predicted high quality electronic and optical properties. Here, we demonstrate dense, selective growth of WSe2 bilayer flakes by chemical vapor deposition with the use of a 1:10 molar mixture of sodium cholate and sodium chloride as the growth promoter to control the local diffusion of W-containing species. A large fraction of the bilayer WSe2 flakes showed a 0 (AB) and 60 degrees (AA') twist between the two layers, whereas Moire 15 and 30 degrees twist angles were also observed. Well-defined monolayer-bilayer junctions were formed in the as-grown bilayer WSe2 flakes, and these interfaces exhibited p-n diode rectification and an ambipolar transport characteristic. This work provides an efficient method for the layer-controlled growth of 2D materials, in particular, 2D transition metal dichalcogenides, and promotes their applications in next-generation electronic and optoelectronic devices.
引用
收藏
页码:10490 / 10498
页数:9
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