Strain-induced island scaling during Si1-xGex heteroepitaxy

被引：76

作者：

Dorsch, W

Strunk, HP

Wawra, H

Wagner, G

Groenen, J

Carles, R

机构：

[1] Univ Erlangen Nurnberg, Lehrstuhl Mikrocharakterisierung, Inst Werkstoffwissensch, D-91058 Erlangen, Germany

[2] Inst Kristallzuchtung, D-12489 Berlin, Germany

[3] Univ Toulouse 3, Phys Solides Lab, F-31062 Toulouse, France

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 02期

关键词：

D O I：

10.1063/1.120622

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the composition-dependent size of pseudomorphic Si1-xGex islands on Si(001). Si1-xGex layers with 0.05 less than or equal to x less than or equal to 0.54 were deposited from metallic solution. The island growth occurs near thermodynamic equilibrium and facilitates a comparison of the results with predictions based on energetics. We find pseudomorphic islands with base widths ranging from several mu m to a few nm. We show that it is possible to adjust the island size by simply choosing the appropriate layer composition. Varying deposition temperatures and growth velocities do not affect the scaling behavior. (C) 1998 American Institute of Physics.

引用

页码：179 / 181

页数：3

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