Electromigration of aluminium through quasi bamboo-like grain blocked silicide interconnects

MoSi2 interconnects between electrical aluminium contact pads were exposed to a high direct current dens Mh cm(-2) during 2000 hours. Thermal annealing of the interconnects prior to the experiment generated grains of almost the width of the line, providing For bamboo-like grain blocked polycrystalline clusters along the line acting as migration stopping sites. Aluminium migration out of the cathode contact pad is observed with pronounced precipitations on the interconnect side walls. SEM and EDX are applied to identify sites and nature of the electromigration product.