Enhanced intergrain tunneling magnetoresistance in half-metallic CrO2 films

被引：212

作者：

Hwang, HY ^{[1
]}

Cheong, SW ^{[1
]}

机构：

[1] RUTGERS STATE UNIV,DEPT PHYS & ASTRON,PISCATAWAY,NJ 08855

来源：

SCIENCE | 1997年 / 278卷 / 5343期

关键词：

D O I：

10.1126/science.278.5343.1607

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Low-field tunneling magnetoresistance was observed in films of half-metallic CrO2 that were grown by high-pressure thermal decomposition of CrO3. High-temperature annealing treatments modified the intergrain barriers of the as-grown films through surface decomposition of CrO2 into insulating Cr2O3, which led to a threefold enhancement of the low-field magnetoresistance. This enhancement indicates the potential of this simple method to directly control the interface barrier characteristics that determine the magnetotransport properties.

引用

页码：1607 / 1609

页数：3

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