A High-Gain SiGe BiCMOS LNA for 5G In-Band Full-Duplex Applications

被引:0
|
作者
Ozkan, Tahsin Alper [1 ]
Burak, Abdurrahman [1 ]
Kalyonc, Ilker [1 ]
Kaynak, Mehmet [2 ]
Gurbuz, Yasar [1 ]
机构
[1] Sabanci Univ, Fac Engn & Nat Sci, TR-34956 Istanbul, Turkey
[2] IHP Microelect, Technol Pk 25, D-15236 Frankfurt, Oder, Germany
关键词
Low-noise amplifiers; BiCMOS integrated circuits; dynamic range; noise figure; 5G mobile communication; RECEIVER;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a low noise amplifier (LNA) implemented in a SiGe BiCMOS technology for 5G applications. The LNA is based on a two-stage cascode amplifier topology with a differential input and single-ended output. The design of the first stage is pseudo-differential. The first stage is based on simultaneous noise and power matching technique. At the input, a balun for single-ended to differential-output conversion is located to enable single-ended measurements. The LNA achieves 25.3 dB of peak gain while dissipating 66 mW of power in small-signal operation. The input-referred 1 dB compression point and noise figure are -10 dBm and 2 dB measured at 25 GHz, respectively. This work achieves the highest FoM among the compared works attributed to the design of the two-stage cascode topology. The LNA occupies 1.35 mm(2) including pads.
引用
收藏
页码:53 / 56
页数:4
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