Leakage current of Pt/(Ba0.7Sr0.3)TiO3 interface with dead layer -: art. no. 024106

被引:43
作者
Chen, B
Yang, H
Miao, J
Zhao, L
Cao, LX
Xu, B
Qiu, XG
Zhao, BR
机构
[1] Chinese Acad Sci, Inst Phys, Natl Lab Superconduct, Beijing 100080, Peoples R China
[2] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China
基金
中国国家自然科学基金;
关键词
D O I
10.1063/1.1828219
中图分类号
O59 [应用物理学];
学科分类号
摘要
Leakage current of Pt/(Ba0.7Sr0.3)TiO3 (BST)/YBa2Cu3O7-delta capacitors on a (001) SrTiO3 substrate was studied. By modeling a low-dielectric constant layer, a so-called dead layer, between the Pt/BST interface as a parasitic capacitor in series with the bulk layer capacitor, the leakage current of Pt/BST interface was well analyzed based on the modified Schottky emission equation. Furthermore, a two-step schematic energy band diagram is proposed to explain the carrier transport through the Pt/BST interface. (C) 2005 American Institute of Physics.
引用
收藏
页数:4
相关论文
共 16 条
  • [1] Thickness dependence of leakage current behavior in epitaxial (Ba,Sr)TiO3 film capacitors
    Ahn, KH
    Kim, SS
    Baik, S
    [J]. JOURNAL OF APPLIED PHYSICS, 2003, 93 (03) : 1725 - 1730
  • [2] Hydrogen induced tunnel emission in Pt/(BaxSr1-x)Ti1+yO3+z/Pt thin film capacitors
    Baniecki, JD
    Laibowitz, RB
    Shaw, TM
    Parks, C
    Lian, J
    Xu, H
    Ma, QY
    [J]. JOURNAL OF APPLIED PHYSICS, 2001, 89 (05) : 2873 - 2885
  • [3] Electrical conduction mechanism in high-dielectric-constant (Ba0.5,Sr0.5)TiO3 thin films
    Chang, ST
    Lee, JM
    [J]. APPLIED PHYSICS LETTERS, 2002, 80 (04) : 655 - 657
  • [4] Thickness and dielectric constant of dead layer in Pt/(Ba0.7Sr0.3)TiO3/YBa2Cu3O7-x capacitor
    Chen, B
    Yang, H
    Zhao, L
    Miao, J
    Xu, B
    Qiu, XG
    Zhao, BR
    Qi, XY
    Duan, XF
    [J]. APPLIED PHYSICS LETTERS, 2004, 84 (04) : 583 - 585
  • [5] Leakage currents in Ba0.7Sr0.3TiO3 thin films for ultrahigh-density dynamic random access memories
    Dietz, GW
    Schumacher, M
    Waser, R
    Streiffer, SK
    Basceri, C
    Kingon, AI
    [J]. JOURNAL OF APPLIED PHYSICS, 1997, 82 (05) : 2359 - 2364
  • [6] Positive temperature coefficient of resistivity in paraelectric (Ba,Sr)TiO3 thin films
    Jeong, DS
    Ahn, KH
    Park, WY
    Hwang, CS
    [J]. APPLIED PHYSICS LETTERS, 2004, 84 (01) : 94 - 96
  • [7] Influences of interfacial intrinsic low-dielectric layers on the dielectric properties of sputtered (Ba,Sr)TiO3 thin films
    Lee, BT
    Hwang, CS
    [J]. APPLIED PHYSICS LETTERS, 2000, 77 (01) : 124 - 126
  • [8] Leakage current measurements of STO and BST thin films interpreted by the "dead" layer model
    Schmitz, S
    Schroeder, H
    [J]. INTEGRATED FERROELECTRICS, 2002, 46 : 233 - 242
  • [9] Thickness dependence of leakage currents in high-permittivity thin films
    Schroeder, H
    Schmitz, S
    [J]. APPLIED PHYSICS LETTERS, 2003, 83 (21) : 4381 - 4383
  • [10] SCOTT JF, 2001, FERROELECTRIC MEMORI