Radiation sensitivity of junctionless double-gate 6T SRAM cells investigated by 3-D numerical simulation

被引：16

作者：

Munteanu, D.

Autran, J. L. ^{[1
]}

机构：

[1] Aix Marseille Univ, F-13397 Marseille 20, France

来源：

MICROELECTRONICS RELIABILITY | 2014年 / 54卷 / 9-10期

关键词：

Junctionless double-gate MOSFET; SRAM cell; Bipolar amplification; Threshold LET; SEU; SEE; QUASI-BALLISTIC TRANSPORT; BIPOLAR AMPLIFICATION; BACKSCATTERING COEFFICIENT; THRESHOLD VOLTAGE; CHARGE COLLECTION; COMPACT MODEL; SOI MOSFETS; METAL-GATE; DEVICES; TRANSISTORS;

D O I：

10.1016/j.microrel.2014.07.079

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The Junctionless Double-Gate (JL-DGFET) technology is potentially interesting for future ultra-scaled devices, due to the simplified manufacturing process and reduced leakage currents. In this work, we investigate, for the first time, the sensitivity to radiation of 6T SRAM cells built up of JL-DGFETs. A detailed comparison with SRAMs based on inversion-mode devices (FDSOI and IM-DGFET) is performed. Our simulations indicate that JL-DGFET SRAMs are naturally more immune to radiation than FDSOI SRAMs, but more sensitive to radiation than IM-DGFET SRAMs. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：2284 / 2288

页数：5

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