Formation and Characterization of Nanolayered Pd-Based Metal/p-4H SiC Systems with Ohmic Behaviour

被引：4

作者：

Kolaklieva, Lilyana ^{[1
]}

Kakanakov, Roumen ^{[1
]}

Polychroniadis, Efstathios ^{[2
]}

Pavlidou, Eleni ^{[2
]}

Tsiaousis, Ioannis ^{[2
]}

Albert, Bensely ^{[2
]}

Andreadou, Ariadne ^{[2
]}

机构：

[1] Bulgarian Acad Sci, Inst Appl Phys, Plovdiv, Bulgaria

[2] Aristotle Univ Thessaloniki, Dept Phys, GR-54006 Thessaloniki, Greece

来源：

JOURNAL OF NANO RESEARCH | 2010年 / 10卷

关键词：

ohmic contacts; contact resistivity; thermal stability; surface morphology; AFM; SEM; TEM; CONTACT RESISTANCE;

D O I：

10.4028/www.scientific.net/JNanoR.10.77

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Three types of nanolayered Pd-based metal/p-4H SiC systems, Au/Pd, Au/Pd/Al and Au/Pd/Ti/Pd have been investigated and compared to Pd monolayered metallization regarding the electrical and thermal properties. The lowest contact resistivity of 2.8x10(-5) Omega.cm(2) has been achieved with the Au/Pd/Ti/Pd contact. This contact exhibits excellent thermal stability during long-term heating at temperature of 700 degrees C and at operating temperatures up to 450 degrees C. The surface morphology investigation has shown that despite the observed decrease, the palladium agglomeration has been not avoided completely in the same contact. The dominated surface roughness was measured to be 75 nm. However, the formation of dendrites in certain places leads to increase the surface roughness to 125 nm. The structural analysis revealed that palladium silicides are formed at the interface metal/p-4H SiC which affects on decrease of the barrier height in more than two times and conversion of the contact from Schottky into ohmic.

引用

页码：77 / 85

页数：9

共 23 条

[1]

ANIKIN MM, 1992, AMORPHOUS CRYSTALLIN, V3, P183

[2] CONTACT RESISTANCE MEASUREMENTS ON P-TYPE 6H-SIC [J].

CROFTON, J ;

BARNES, PA ;

WILLIAMS, JR ;

EDMOND, JA .

APPLIED PHYSICS LETTERS, 1993, 62 (04) :384-386

[3]

CROFTON J, 1992, AMORPHOUS CRYSTALLIN, V4, P176

[4]

DIAMON H, 1986, JPN J APPL PHYS, V25, pL592

[5] LOW-RESISTIVITY (SIMILAR-TO-10(-5)OMEGA-CM2) OHMIC CONTACTS TO 6H SILICON-CARBIDE FABRICATED USING CUBIC SILICON-CARBIDE CONTACT LAYER [J].

DMITRIEV, VA ;

IRVINE, K ;

SPENCER, M ;

KELNER, G .

APPLIED PHYSICS LETTERS, 1994, 64 (03) :318-320

[6] ELECTRICAL CONTACTS TO BETA-SILICON CARBIDE THIN-FILMS [J].

EDMOND, JA ;

RYU, J ;

GLASS, JT ;

DAVIS, RF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (02) :359-362

[7] Mechanism of ohmic behavior of Al/Ti contacts to p-type 4H-SiC after annealing [J].

Johnson, BJ ;

Capano, MA .

JOURNAL OF APPLIED PHYSICS, 2004, 95 (10) :5616-5620

[8] Temperature stable Pd ohmic contacts to p-type 4H-SiC formed at low temperatures [J].

Kassamakova, L ;

Kakanakov, RD ;

Kassamakov, IV ;

Nordell, N ;

Savage, S ;

Hjörvarssön, B ;

Svedberg, EB ;

Åbom, L ;

Madsen, LD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (03) :605-611

[9]

KASSAMAKOVA L, 1999, THESIS

[10]

Kassamakova-Kolaklieva L, 2002, MATER SCI FORUM, V433-4, P713, DOI 10.4028/www.scientific.net/MSF.433-436.713

← 1 2 3 →