Multicolored-light emission from InGaN/GaN multiple quantum wells grown by selective-area epitaxy on patterned Si(100) substrates

GaN- based light- emitting diodes (LEDs) structures with microstripes of InGaN/ GaN quantum wells were grown on the Si(111) planes of microscale V- grooved Si(100) substrate by metal- organic vapor- phase epitaxy. This microstriped microfacet structure is composed of two semipolar (1 101) planes and two polar (0001) planes. The indium (In) composition and thickness of quantum wells grown on semipolar (1 101) plane differ from polar (0001) plane, causing the variation of local emission wavelength along the planes. Using the cathodoluminescence (CL) techniques, it was found that the emission wavelength is longer at the top of the (0002) planes, whereas it is shorter at the bottom of the (0002) plane and the (1 101) plane. The continuous change in the properties of the quantum wells results in a uniform multicolored emission band. The results show that unique structures could uniformly activate multicolored light to realize the integrated light emission over the most visible spectrum. In some situations, this arrangement can emit white light. This method can be used to produce integrated white- light sources for monolithically integrated whitelight- emitting diodes.