Investigation of Asymmetric Characteristics of Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O Field Effect Transistors

被引：22

作者：

Chen, Qian ^{[1
,2
]}

Wang, Lingfei ^{[1
,2
]}

Duan, Xinlv ^{[1
,2
]}

Guo, Jingrui ^{[1
,2
]}

Wang, Zhaogui ^{[3
]}

Huang, Kailiang ^{[3
]}

Feng, Junxiao ^{[3
]}

Sun, Ying ^{[3
]}

Jiao, Guangfan ^{[3
]}

Jing, Weiliang ^{[3
]}

Geng, Di ^{[1
,2
]}

Li, Ling ^{[1
,2
]}

机构：

[1] Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R China

[2] Chinese Acad Sci, Univ Chinese Acad Sci, Inst Microelect, Beijing 100049, Peoples R China

[3] Huawei Technol Co Ltd, Shenzhen 518129, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2022年 / 43卷 / 06期

关键词：

Electrodes; Performance evaluation; Field effect transistors; Hafnium oxide; Logic gates; Random access memory; Electric potential; Asymmetric characteristic; contact barrier; drain-induced barrier lowering (DIBL); In-Ga-Zn-O (IGZO); technology computer-aided design (TCAD); THIN-FILM TRANSISTORS; A-IGZO TFTS;

D O I：

10.1109/LED.2022.3168059

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work reports the comprehensive study on asymmetric characteristic based on proposed stackable vertical Channel-All-Around (CAA) In-Ga-Zn-O field-effect transistors (IGZO FETs). Sufficient experimental data are analyzed for the reason of performance distinction between normal and reversed source/drain setup. Contact profile has great impacts on device characteristics such as short-channel effects and drain-induced barrier lowering (DIBL) due to different electric filed distributions in the IGZO channel near Schottky barrier. That is mainly caused by different etch process for upper and bottom electrodes, which doesn't exist in planar structures. Furthermore, a 3-D technology computer-aided design (TCAD) device model is established. Interface defects are applied for slight variation in contact potential to verify the accuracy. Related analysis of contact barriers has been done based on simulation results. What's more, channel length and etching depth of bottom electrode are also play a role in asymmetric characteristics, which could be applied as a reference to improve devices performance.

引用

页码：894 / 897

页数：4

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