Metal-assisted chemical etching of GaAs using Au catalyst deposited on the backside of a substrate

被引：15

作者：

Asoh, Hidetaka ^{[1
]}

Suzuki, Yuta ^{[1
]}

Ono, Sachiko ^{[1
]}

机构：

[1] Kogakuin Univ, Dept Appl Chem, 2665-1 Nakano, Hachioji, Tokyo 1920015, Japan

来源：

ELECTROCHIMICA ACTA | 2015年 / 183卷

关键词：

GaAs; Metal-assisted chemical etching; Au catalyst; SELF-ORGANIZED SPHERES; SILICON; NANOSTRUCTURES; NANOPARTICLES; NANOHOLES;

D O I：

10.1016/j.electacta.2015.05.167

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

GaAs line patterns and pillar arrays were fabricated by metal-assisted chemical etching using Au thin films deposited on the backsides of substrates. After Au was deposited on the substrate backsides, the specimens were coated with shape-controlled resist masks and were etched in mixed solutions of H2SO4 and KMnO4, resulting in the formation of ordered line patterns and pillar arrays on the GaAs substrates. The Au thin films, which served as catalysts, were not deformed or delaminated during the etching process. This method offers a new route to fabricate complex three-dimensional GaAs structures. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：8 / 14

页数：7

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