Improvement of MOVPE grown ZnTe:P layers by annealing treatment

被引：5

作者：

Saito, K. ^{[1
]}

Fujimoto, K. ^{[2
]}

Yamaguchi, K. ^{[2
]}

Tanaka, T. ^{[1
]}

Nishio, M. ^{[2
]}

Guo, Q. X. ^{[2
]}

Ogawa, H. ^{[1
]}

机构：

[1] Saga Univ, Synchrotron Light Applicat Ctr, 1 Honjo, Saga 8408502, Japan

[2] Saga Univ, Dept Elect & Elect Engn, Saga 8408502, Japan

来源：

PROCEEDINGS OF THE 17TH INTERNATIONAL VACUUM CONGRESS/13TH INTERNATIONAL CONFERENCE ON SURFACE SCIENCE/INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY | 2008年 / 100卷

关键词：

D O I：

10.1088/1742-6596/100/4/042019

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The effects of annealing treatment in nitrogen flow upon the optical and electrical properties of ZnTe:P homoepitaxial layers grown by metalorganic vapour phase epitaxy at various substrate temperatures have been investigated. The photoluminescence properties at 4.2 K of the layers are drastically improved by the annealing treatment independent of the substrate temperature. Donor-acceptor pair emission vanishes and instead free-to-bound transition emission becomes significant, and also broadened acceptor-related excitonic emission slightly shifts towards longer wavelength side, indicating reduction of compensation effect and the activation of the P atoms. These are conformed with the fact that the carrier concentration of ZnTe: P layers are increased significantly for any substrate temperature.

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页数：4

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