A 130nm SiGe BiCMOS technology for mm-wave applications featuring HBT with fT/fMAX of 260/320 GHz

被引：0

作者：

Candra, Panglijen ^{[1
]}

Jain, Vibhor ^{[1
]}

Cheng, Peng ^{[1
]}

Pekarik, John ^{[1
]}

Camillo-Castillo, R. ^{[1
]}

Gray, Peter ^{[1
]}

Kessler, Thomas ^{[1
]}

Gambino, Jeffrey ^{[1
]}

Dunn, James ^{[1
]}

Harame, David ^{[1
]}

机构：

[1] IBM Technol Dev Ctr, 1000 River St, Essex Jct, VT 05452 USA

来源：

2013 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC) | 2013年

关键词：

SiGe; BiCMOS; 130nm; mm-wave; HBT;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A manufacturable 130nm SiGe BiCMOS RF technology for high-performance mm-wave analog applications having a high-speed SiGe Heterojunction Bipolar Transistor (HBT) integrated into a full-featured RFCMOS is presented. The technology features a high performance (HP) SiGe HBT with f(T)/f(MAX) of 260/320 GHz, a high breakdown (HB) HBT with BVCEO of 3.5V, 130nm RF CMOS, and a full suite of passive devices. Specific device results pertaining to this BiCMOS8XP technology are discussed in this paper.

引用

页码：381 / 384

页数：4

共 7 条

[1] Technology Computer-Aided Design (TCAD) Feasibility Study of Scaling SiGe HBTs
Camillo-Castillo, R. A.
Stricker, A. D.
Johnson, J. B.
Appaswarmy, A.
Malladi, R. A.
Joseph, A. J.
Harame, D. L.
[J]. SIGE, GE, AND RELATED COMPOUNDS 4: MATERIALS, PROCESSING, AND DEVICES, 2010, 33 (06): : 319 - 329
[2] Ding H, 2007, ELEC COMP C, P1246
[3] Current status and future trends of SiGeBiCMOS technology
Harame, DL
Ahlgren, DC
Coolbaugh, DD
Dunn, JS
Freeman, GG
Gillis, JD
Groves, RA
Hendersen, GN
Johnson, RA
Joseph, AJ
Subbanna, S
Victor, AM
Watson, KM
Webster, CS
Zampardi, PJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (11) : 2575 - 2594
[4] 3D Integration Techniques Applied to SiGe Power Amplifiers
Malladi, Ramana
Joseph, Alvin
Lindgren, Peter
Ni, Wan
Wang, Dawn
Ding, Hanyi
Erturk, Mete
Previti-Kelly, Rosemary
[J]. SIGE, GE, AND RELATED COMPOUNDS 3: MATERIALS, PROCESSING, AND DEVICES, 2008, 16 (10): : 1053 - 1067
[5] Orner BA, 2003, BCTM PROC, P203
[6] A 0.13μm CMOS platform with Cu low-k interconnects for system on chip applications
Schiml, T
Biesemans, S
Brase, G
Burrell, L
Cowley, A
Chen, KC
Von Ehrenwall, A
Von Ehrenwall, B
Felsner, P
Gill, J
Grellner, F
Guarin, F
Han, LK
Hoinkis, M
Hsiung, E
Kaltalioglu, E
Kim, P
Knoblinger, G
Kulkarni, S
Leslie, A
Mono, T
Schafbauer, T
Schroeder, U
Schruefer, K
Spooner, T
Warner, D
Wang, C
Wong, R
Demm, E
Leung, P
Stetter, M
Wann, C
Chen, JK
Crabbé, E
[J]. 2001 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2001, : 101 - 102
[7] A Fully Integrated 16-Element Phased-Array Transmitter in SiGe BiCMOS for 60-GHz Communications
Valdes-Garcia, Alberto
Nicolson, Sean T.
Lai, Jie-Wei
Natarajan, Arun
Chen, Ping-Yu
Reynolds, Scott K.
Zhan, Jing-Hong Conan
Kam, Dong G.
Liu, Duixian
Floyd, Brian
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2010, 45 (12) : 2757 - 2773

← 1 →