A Low-Complexity Retention Noise Parameter Estimation For MLC NAND Flash Memory

被引:0
|
作者
Sun, Wenhao [1 ]
Zheng, Jianping [1 ]
机构
[1] Xidian Univ, State Key Lab Integrated Serv Networks, Xian 710071, Shaanxi, Peoples R China
来源
ICC 2019 - 2019 IEEE INTERNATIONAL CONFERENCE ON COMMUNICATIONS (ICC) | 2019年
基金
中国国家自然科学基金;
关键词
Retention noise; Flash memory; Channel parameters estimation; THRESHOLD VOLTAGE DISTRIBUTION; RECOVERY;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Retention noise is one of key components which impact negatively the reliability of NAND flash memory. It's essential to apply a mechanism which can recover data from long-time retention noised devices. The challenge is that the parameters, mean and variance, of retention noise vary with retention time. In this paper, a low-complexity two-stage method is proposed to estimate the parameters of retention noise. The first stage is to give an initial choice of the test state and two corresponding read sensing reference voltages by which a three-region voltage partition of this state is determined. Utilizing the relation between noise parameters and ratios of samples located in these properly selected voltage regions, initial estimates of mean and variance are acquired. The second stage is to find out new read sensing reference voltages of another state by employing these initial estimates. Then. refined estimates of mean and variance can be acquired by similar processing performed in the first stage. Numerical results show that the proposed method can estimate channel parameters accurately and extend retention time effectively.
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页数:6
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