Variations of thermoelectric properties of Mg2.2Si1-ySny-0.013Sb0.013 materials with different Si/Sn ratios

被引：5
作者：
Gao, Hong Li [1 ]
Zhu, Tiejun [2 ,3 ]
Zhao, Xinbing [2 ,3 ]
Deng, Yuan [1 ]
机构：
[1] Beihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R China
[2] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
[3] Zhejiang Univ, Dept Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R China
来源：
JOURNAL OF SOLID STATE CHEMISTRY | 2014年 / 220卷
基金：
中国国家自然科学基金; 美国国家科学基金会;
关键词：
Thermoelectric; Mg2Si1-xSnx solid solutions; Electronic transport; Sb doping; SOLID-SOLUTIONS; PERFORMANCE; FIGURE; MERIT; NANOSTRUCTURES; EFFICIENCY; PBTE; MG;
D O I：
10.1016/j.jssc.2014.08.026
中图分类号：
O61 [无机化学];
学科分类号：
070301 ; 081704 ;
摘要：
Mg2Si-Mg2Sn solid solutions are a promising class of thermoelectric materials. Mg2.2Si1-ySny-0.013Sb0.013 compounds with different Si/Sn ratios were prepared by B2O3 "flux" method followed by hot-pressing. The effect of Si/Sn ratio on the thermoelectric properties of the Mg2Si-Mg2Sn solid solutions at a fixed Sb doping level were measured in the temperature range 300-760 K. With the increase of Sn content (0.3 <= y <= 0.7), power factors are improved and lattice thermal conductivity decreased. Band convergence induced by Si/Sn ratio leads to enhanced effective mass and the materials parameter beta which qualifies a kind of thermoelectric material is improved evidently. A maximum ZT of similar to 1.1 at similar to 760 K was achieved for the Mg2.2Si0.3Sn0.7-0.013Sb0.013 sample arising from a high power factor of similar to 4 x 10(-3) W m(-1) K-2 and a low lattice thermal conductivity of similar to 1.6 W m(-1) K-1 at similar to 760 K. (C) 2014 Elsevier Inc. All rights reserved.
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页码：157 / 162
页数：6
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