Proton irradiation effects in silicon junction diodes and charge-coupled-devices

被引：4

作者：

Simoen, E

Vanhellemont, J

Alaerts, A

Claeys, C

Gaubas, E

Kaniava, A

Ohyama, H

Sunaga, H

Nahsiyama, I

Skorupa, W

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Kumamoto Natl Coll Technol, LT-2054 Vilnius, Lithuania

[3] Japan Atom Energy Res Inst, Takasaki Radiat Chem Res Estab, Gunma 37012, Japan

[4] Rossendorf Inc, Forschungszentrum Rossendorf EV, Inst Ionenstrahlphys & Mat Forsch, D-01314 Dresden, Germany

来源：

RADIATION PHYSICS AND CHEMISTRY | 1997年 / 50卷 / 05期

关键词：

D O I：

10.1016/S0969-806X(97)00066-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Proton irradiation effects in silicon devices are studied, for components fabricated in various substrates in order to reveal possible hardening effects. The degradation of p-n junction diodes increases in first order proportionally with the fluence, when submitted to 10 MeV proton irradiations in the range 5 x 10(9)-5 x 10(11) cm(-2). The damage coefficients for both p-and n-type Czochralski, Float-Zone and epitaxial wafers are reported. Charge-Coupled-Devices fabricated in a 1.2 mu m CCD-CMOS technology are shown to be quite resistant to 59 MeV H+ irradiations, irrespective of the substrate type. (C) 1997 Elsevier Science Ltd. All rights reserved.

引用

页码：417 / 422

页数：6

共 12 条

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