Electrodeposition of Se on Ti - Impedance and photoelectrochemical study of passivation phenomena

被引：4

作者：

Cattarin, S ^{[1
]}

Musiani, M ^{[1
]}

机构：

[1] CNR, Ist Polarog & Elettrochim Preparat, I-35127 Padua, Italy

来源：

JOURNAL OF ELECTROANALYTICAL CHEMISTRY | 1997年 / 437卷 / 1-2期

关键词：

cathodic deposition; thin film; photoconductivity; high field conduction;

D O I：

10.1016/S0022-0728(97)00067-3

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

The passivation phenomena observed during electrodeposition of Se on Ti substrates have been investigated. A high overpotential for hydrogen evolution appears essential to observation of passive and transpassive domains. Impedance analysis suggests that passivation results from the formation of a thin, highly resistive film, detected under all conditions of current density, temperature, illumination and concentration of sodium n-dodecyl sulphate. Electron transport in this film presumably occurs by a high field conduction mechanism. The deposits show photoconductive properties typical of amorphous Se. (C) 1997 Elsevier Science S.A.

引用

页码：85 / 92

页数：8

共 19 条

[11]

HARTKE JL, 1965, PHYS REV, V139, P970

[12] EFFECTS OF ANNEALING ON GAP STATES IN AMORPHOUS SI FILMS [J].

HASEGAWA, S ;

YAZAKI, S ;

SHIMIZU, T .

SOLID STATE COMMUNICATIONS, 1978, 26 (07) :407-410

[13]

KAZACOS MS, 1980, J ELECTROCHEM SOC, V127, P869

[14]

LEWERENZ HJ, 1995, PHOTOVOLTAIK GRUNDLA, P207

[15] FIELD-CONTROLLED PHOTOGENERATION AND FREE-CARRIER TRANSPORT IN AMORPHOUS SELENIUM FILMS [J].

TABAK, MD ;

WARTER, PJ .

PHYSICAL REVIEW, 1968, 173 (03) :899-&

[16]

Tauc J., 1972, Optical properties of solids, P277

[17]

VIJH AK, 1973, ELECTROCHEMISTRY MET, P169

[18] THE ELECTROPLATING OF METALLIC SELENIUM [J].

VONHIPPEL, A ;

BLOOM, MC .

JOURNAL OF CHEMICAL PHYSICS, 1950, 18 (09) :1243-1251

[19]

ZHDANOV SI, 1975, ENCY ELECTROCHEMISTR, V4, P361

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