Sensitivity analysis and uncertainty estimation for nanoscale MOSFET

被引：1

作者：

Yu, Panpan ^{[1
]}

Sun, Ling ^{[2
]}

Cheng, Jiali ^{[3
]}

Gao, Jianjun ^{[1
]}

机构：

[1] East China Normal Univ, Sch Informat Sci & Technol, Shanghai 200062, Peoples R China

[2] Nantong Univ, Jiangsu Key Lab ASIC Design, Nantong 226019, Peoples R China

[3] Univ Sci & Technol Suzhou, Sch Elect & Informat Engn, Suzhou 215000, Peoples R China

来源：

INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS | 2018年 / 31卷 / 05期

关键词：

MOSFET; sensitivity analysis; small signal; uncertainty estimation; SERIES RESISTANCE EXTRACTION; PARAMETER EXTRACTION; TRANSISTORS; GHZ;

D O I：

10.1002/jnm.2346

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Analytical expressions of the sensitivity analysis and uncertainty estimation for intrinsic elements and substrate parasitics in the small-signal equivalent circuit model of metal-oxide-semiconductor field-effect transistor, related to the S-parameter measurement uncertainties, are derived in this paper. And the substrate parasitic elements are extracted, and corresponding sensitivities are calculated by using a cut-off condition extraction procedure. Furthermore, the intrinsic model parameters and their uncertainties versus bias voltage are also investigated to give more reliable extraction results suitable for implementation in automatic multibias extraction programs.

引用

页数：11

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