graphene;
electronic states;
quantum Hall effect;
tunneling;
D O I:
10.1016/j.ssc.2007.02.045
中图分类号:
O469 [凝聚态物理学];
学科分类号:
070205 ;
摘要:
We study the electronic structure near a graphene edge in a strong perpendicular magnetic field. In high Landau levels these edge states are similar in structure to those of standard two-dimensional electron gas systems (s-2DEG's). The lowest Landau supports half as many edge states as those of higher Landau levels, leading to a quantization of the Hall conductance that is shifted relative to s-2DEG's. The presence of both hole-like and electron-like edge states is shown to lead to the existence of a domain wall at the edge of an undoped graphene armchair edge when one considers the effect of quantum Hall ferromagnetism. The domain wall supports both collective and charged gapless excitations whose consequences for tunnelling experiments are discussed. (c) 2007 Elsevier Ltd. All rights reserved.
机构:
Max Planck Inst Festkoperforsch, D-70569 Stuttgart, Germany
DGIST, Dept Emerging Mat Sci, Daegu 42988, South KoreaMax Planck Inst Festkoperforsch, D-70569 Stuttgart, Germany
Kim, Youngwook
Moon, Pilkyung
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机构:
NYU Shanghai, Arts & Sci, Shanghai 200122, Peoples R China
NYU Shanghai, NYU ECNU Inst Phys, Shanghai 200062, Peoples R ChinaMax Planck Inst Festkoperforsch, D-70569 Stuttgart, Germany
Moon, Pilkyung
Watanabe, Kenji
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机构:
Natl Inst Mat Sci, Res Ctr Funct Mat, Tsukuba, Ibaraki 3050044, JapanMax Planck Inst Festkoperforsch, D-70569 Stuttgart, Germany
Watanabe, Kenji
Taniguchi, Takashi
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机构:
Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, Tsukuba, Ibaraki 3050044, JapanMax Planck Inst Festkoperforsch, D-70569 Stuttgart, Germany
机构:
Daegu Gyeongbuk Inst Sci & Technol DGIST, Dept Phys & Chem, Daegu 42988, South KoreaDaegu Gyeongbuk Inst Sci & Technol DGIST, Dept Phys & Chem, Daegu 42988, South Korea
Kim, Dohun
Kang, Byungmin
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机构:
MIT, Dept Phys, Cambridge, MA 02139 USA
Korea Inst Adv Study, Sch Phys, Seoul 02455, South KoreaDaegu Gyeongbuk Inst Sci & Technol DGIST, Dept Phys & Chem, Daegu 42988, South Korea
Kang, Byungmin
Choi, Yong-Bin
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机构:
Pohang Univ Sci & Technol POSTECH, Dept Phys, Pohang 37673, South KoreaDaegu Gyeongbuk Inst Sci & Technol DGIST, Dept Phys & Chem, Daegu 42988, South Korea
Choi, Yong-Bin
Watanabe, Kenji
论文数: 0引用数: 0
h-index: 0
机构:
Natl Inst Mat Sci, Res Ctr Funct Mat, Tsukuba, Ibaraki 3050044, JapanDaegu Gyeongbuk Inst Sci & Technol DGIST, Dept Phys & Chem, Daegu 42988, South Korea
Watanabe, Kenji
Taniguchi, Takashi
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h-index: 0
机构:
Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, Tsukuba, Ibaraki 3050044, JapanDaegu Gyeongbuk Inst Sci & Technol DGIST, Dept Phys & Chem, Daegu 42988, South Korea
Taniguchi, Takashi
Lee, Gil-Ho
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机构:
Pohang Univ Sci & Technol POSTECH, Dept Phys, Pohang 37673, South Korea
Asia Pacific Ctr Theoret Phys, Pohang 37673, South KoreaDaegu Gyeongbuk Inst Sci & Technol DGIST, Dept Phys & Chem, Daegu 42988, South Korea
Lee, Gil-Ho
Cho, Gil Young
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机构:
Pohang Univ Sci & Technol POSTECH, Dept Phys, Pohang 37673, South Korea
Asia Pacific Ctr Theoret Phys, Pohang 37673, South Korea
Inst Basic Sci IBS, Ctr Artificial Low Dimens Elect Syst, Pohang 37673, South KoreaDaegu Gyeongbuk Inst Sci & Technol DGIST, Dept Phys & Chem, Daegu 42988, South Korea
Cho, Gil Young
Kim, Youngwook
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机构:
Daegu Gyeongbuk Inst Sci & Technol DGIST, Dept Phys & Chem, Daegu 42988, South KoreaDaegu Gyeongbuk Inst Sci & Technol DGIST, Dept Phys & Chem, Daegu 42988, South Korea