Modelling plasma-induced hydrogen profiles in boron-doped and near-intrinsic silicon

被引：10
作者：
Voronkov, Vladimir V. [1 ]
Falster, Robert [1 ]
机构：
[1] SunEdisonc Semicond, Via Nazl 59, I-39012 Merano, Italy
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2017年 / 214卷 / 07期
关键词：
boron; diffusion; hydrogen; silicon; SINGLE-CRYSTAL SILICON; N-TYPE; P-TYPE; DIFFUSION; PASSIVATION;
D O I：
10.1002/pssa.201700287
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Reported depth profiles of hydrogen (deuterium) in silicon, created by exposure to plasma, were re-analysed on the basis of modern knowledge of the properties of atomic and dimeric hydrogen species. In boron-doped samples, the profiles allow to extract the equilibrium constant for the boron passivation reaction and the binding energy of the HB defect, 0.75eV. In the near-intrinsic samples the profiles shape suggests two independent in-diffusion and pairing processes: one is by fast dimers, and the other - by neutral monomers that are reversibly trapped by some impurity, probably carbon. (C) 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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页数：6
相关论文
共 23 条
  • [1] KINETIC-MODEL FOR HYDROGEN REACTIONS IN BORON-DOPED SILICON
    BORENSTEIN, JT
    CORBETT, JW
    PEARTON, SJ
    [J]. JOURNAL OF APPLIED PHYSICS, 1993, 73 (06) : 2751 - 2754
  • [2] HYDROGEN-BONDING AND DIFFUSION IN CRYSTALLINE SILICON
    CHANG, KJ
    CHADI, DJ
    [J]. PHYSICAL REVIEW B, 1989, 40 (17): : 11644 - 11653
  • [3] Hydrogen in C-rich Si and the diffusion of vacancy-H complexes
    Estreicher, S. K.
    Docaj, A.
    Bebek, M. B.
    Backlund, D. J.
    Stavola, M.
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2012, 209 (10): : 1872 - 1879
  • [4] Estreicher S. K., 2014, Silicon, Germanium and their Alloys: Defects, Impurities and Nanocrystals, P217
  • [5] EPR of interstitial hydrogen in silicon: Uniaxial stress experiments
    Gorelkinskii, YV
    Nevinnyi, NN
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1996, 36 (1-3): : 133 - 137
  • [6] TRAP-LIMITED HYDROGEN DIFFUSION IN DOPED SILICON
    HERRERO, CP
    STUTZMANN, M
    BREITSCHWERDT, A
    SANTOS, PV
    [J]. PHYSICAL REVIEW B, 1990, 41 (02): : 1054 - 1058
  • [7] HERRING C, 1991, SEMICONDUCT SEMIMET, V34, P225
  • [8] Energy levels of isolated interstitial hydrogen in silicon
    Herring, C
    Johnson, NM
    Van de Walle, CG
    [J]. PHYSICAL REVIEW B, 2001, 64 (12)
  • [9] JOHNSON NM, 1987, PHYS REV B, V35, P4166, DOI 10.1103/PhysRevB.35.4166
  • [10] ABSENCE OF OXYGEN DIFFUSION DURING HYDROGEN PASSIVATION OF SHALLOW-ACCEPTOR IMPURITIES IN SINGLE-CRYSTAL SILICON
    JOHNSON, NM
    MOYER, MD
    [J]. APPLIED PHYSICS LETTERS, 1985, 46 (08) : 787 - 789
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