Electronic structure and optical properties of ZnX (X=O, S, Se, Te):: A density functional study

被引:229
作者
Karazhanov, S. Zh.
Ravindran, P.
Kjekshus, A.
Fjellvag, H.
Svensson, B. G.
机构
[1] Univ Oslo, Dept Chem, Ctr Mat Sci & Nanotechnol, N-0315 Oslo, Norway
[2] Phys Tech Inst, Tashkent 700084, Uzbekistan
[3] Univ Oslo, Dept Phys, N-0316 Oslo, Norway
关键词
D O I
10.1103/PhysRevB.75.155104
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Electronic band structure and optical properties of zinc monochalcogenides with zinc-blende- and wurtzite-type structures were studied using the ab initio density functional method within the local-density approximation (LDA), generalized-gradient approximation, and LDA+U approaches. Calculations of the optical spectra have been performed for the energy range 0-20 eV, with and without including spin-orbit coupling. Reflectivity, absorption and extinction coefficients, and refractive index have been computed from the imaginary part of the dielectric function using the Kramers-Kronig transformations. A rigid shift of the calculated optical spectra is found to provide a good first approximation to reproduce experimental observations for almost all the zinc monochalcogenide phases considered. By inspection of the calculated and experimentally determined band-gap values for the zinc monochalcogenide series, the band gap of ZnO with zinc-blende structure has been estimated.
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页数:14
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共 83 条
[1]  
Adachi S., 1999, Optical Constants of Crystalline and Amorphous Semiconductors Numerical Data and Graphical Information, V1st ed.
[2]  
Adolph B., 2001, PHYS REV B, V63, DOI DOI 10.1103/PHYSREVB.63.125108
[3]   AB-INITIO CALCULATION OF THE ELECTRONIC, STRUCTURAL, AND DYNAMICAL PROPERTIES OF ZN-BASED SEMICONDUCTORS [J].
AGRAWAL, BK ;
YADAV, PS ;
AGRAWAL, S .
PHYSICAL REVIEW B, 1994, 50 (20) :14881-14887
[4]   DENSITY-FUNCTIONAL THEORY AND NIO PHOTOEMISSION SPECTRA [J].
ANISIMOV, VI ;
SOLOVYEV, IV ;
KOROTIN, MA ;
CZYZYK, MT ;
SAWATZKY, GA .
PHYSICAL REVIEW B, 1993, 48 (23) :16929-16934
[5]   Optical properties and electronic structures of semiconductors with screened-exchange LDA [J].
Asahi, R ;
Mannstadt, W ;
Freeman, AJ .
PHYSICAL REVIEW B, 1999, 59 (11) :7486-7492
[6]   ATOMS IN MOLECULES [J].
BADER, RFW .
ACCOUNTS OF CHEMICAL RESEARCH, 1985, 18 (01) :9-15
[7]   MIGRATION OF INTERSTITIALS IN SILICON [J].
BARAFF, GA ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1984, 30 (06) :3460-3469
[8]   Compensation of dynamical quasiparticle and vertex corrections in optical spectra [J].
Bechstedt, F ;
Tenelsen, K ;
Adolph, B ;
DelSole, R .
PHYSICAL REVIEW LETTERS, 1997, 78 (08) :1528-1531
[9]   Theory of optical absorption in diamond, Si, Ge, and GaAs [J].
Benedict, LX ;
Shirley, EL ;
Bohn, RB .
PHYSICAL REVIEW B, 1998, 57 (16) :R9385-R9387
[10]   Implementation of the projector augmented-wave LDA+U method:: Application to the electronic structure of NiO [J].
Bengone, O ;
Alouani, M ;
Blöchl, P ;
Hugel, J .
PHYSICAL REVIEW B, 2000, 62 (24) :16392-16401