Analysis of high-speed traveling wave photodetectors using time-domain TLM method

被引:0
|
作者
Pasalic, D [1 ]
Vahldieck, R [1 ]
机构
[1] Swiss Fed Inst Technol, IFH, CH-8092 Zurich, Switzerland
关键词
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暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The time-domain TLM method was used for rigorous analysis of low-temperature-grown GaAs based TWPDs. The analysis is performed taking into consideration effects like velocity mismatch, carrier life time, carrier saturation velocity, RF and optical attenuation constants and reflections from the input facet of the TWPD. The simulated data were compared with the experimental results and a very good agreement was observed.
引用
收藏
页码:857 / 860
页数:4
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