Contribution of the morphological grain sizes to the electrical resistivity of platinum and gold thin films

被引：14
作者：
Cattani, M [1 ]
Salvadori, MC [1 ]
机构：
[1] Univ Sao Paulo, Inst Fis, BR-05315970 Sao Paulo, Brazil
来源：
SURFACE REVIEW AND LETTERS | 2004年 / 11卷 / 4-5期
关键词：
metallic thin films; electrical resistivity; morphological grain sizes;
D O I：
10.1142/S0218625X04006396
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We have measured the morphological grain sizes of nanostructured platinum and gold thin films. In previous works their electrical resistivities have been measured and a theoretical approach was proposed to explain the resistivity experimental data. It will be shown that within the framework of our theoretical approach, the morphological grain sizes play an essential role in the electrical resistivity of these metallic thin films.
引用
收藏
页码：463 / 467
页数：5
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