Charge detrapping and dielectric breakdown of nanocrystalline zinc oxide embedded zirconium-doped hafnium oxide high-k dielectrics for nonvolatile memories

被引：22

作者：

Yang, Chia-Han ^{[1
,2
]}

Kuo, Yue ^{[1
]}

Lin, Chen-Han ^{[1
]}

机构：

[1] Texas A&M Univ, Thin Film Nano & Microelect Res Lab, College Stn, TX 77843 USA

[2] Univ Tennessee, Dept Ind & Informat Engn, Knoxville, TN 37996 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 19期

基金：

美国国家科学基金会;

关键词：

electric breakdown; electron traps; hafnium compounds; high-k dielectric thin films; hole traps; II-VI semiconductors; nanostructured materials; semiconductor-insulator boundaries; wide band gap semiconductors; zinc compounds; zirconium; RELAXATION CURRENT; DEVICES;

D O I：

10.1063/1.3429590

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Charge detrapping and dielectric breakdown phenomena of the nanocrystalline zinc oxide embedded zirconium-doped hafnium oxide high-k dielectric have been investigated. Charges were loosely or strongly retained at the nanocrystal sites which were saturated above a certain stress voltage. From the polarity change of the relaxation current, it was confirmed that the high-k part of the dielectric film was broken under a high gate bias voltage condition while the nanocrystals still retained charges. These charges were gradually released. These unique characteristics are important to the performance and reliability of the memory device. (C) 2010 American Institute of Physics. [doi:10.1063/1.3429590]

引用

页数：3