High-efficiency 352 nm quaternary InAlGaN-based ultraviolet light-emitting diodes grown on GaN substrates

被引：42

作者：

Hirayama, H

Akita, K

Kyono, T

Nakamura, T

Ishibashi, K

机构：

[1] RIKEN, Inst Phys & Chem Res, Wako, Saitama 3510198, Japan

[2] Sumitomo Elect Ind Ltd, Semicond Res & Dev Labs, Itami, Hyogo 6640016, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2004年 / 43卷 / 10A期

关键词：

quaternary InAlGaN; GaN substrate; UV-LEDs; threading dislocation density; MOCVD;

D O I：

10.1143/JJAP.43.L1241

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrated high-efficiency ultraviolet (UV) light-emitting diodes (LEDs) with an emission wavelength of 352 nm using a quaternary InAlGaN multiple-quantum-well (MQW) emitting region. GaN substrates were used in order to eliminate the effects of threading dislocations. Emission fluctuation due to In segregation was clearly observed even in a dislocation-free area by a cathode luminescence (CL) image of a quaternary InAlGaN MQW, which is considered to contribute to the achievement of a high-efficiency UV emission. The maximum UV output power obtained was as high as 7.4 mW under room temperature (RT) CW operation. The maximum external quantum efficiency (EQE) was 1.1% with an injection current of 50 mA, which is the highest EQE ever obtained for 350-nm-band UV LEDs with a top-emission geometry.

引用

页码：L1241 / L1243

页数：3

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