A switched gain low noise amplifier for ultrawideband wireless applications

被引：0
|
作者：
Wu, Chang-Ching [1 ]
Yen, Albert [2 ]
Cheng, Yu [1 ]
Chang, Jen-Chung [1 ]
机构：
[1] UMC, Hsinchu, Taiwan
[2] UMC, Sunnyvale, CA USA
来源：
2007 IEEE RADIO AND WIRELESS SYMPOSIUM | 2007年
关键词：
CMOS; low noise amplifier; LNA; switched gain; transmit/receive switch; T/R switch; ultrawideband; UWB;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A low-power switched gain low noise amplifier (LNA) is presented for ultrawideband (UWB) wireless applications. The proposed topology is co-designed with transmit/receive (T/R) switch for Mode 1 OFDM applications and the integrated circuit is implemented in a 0.13 mu m CAMOS technology. The measurement results show a gain-switch of 10dB where s21 in the frequency band of interest is 17.4-19.2dB at high gain mode (HG) and 8.8-9.1dB at low gain mode (LG). The s11 is lower than -17dB for both modes. The circuit gives noise figures of 3.3-3.9dB at HG and 4.8-7.9dB at LC. The input 1dB compression points (P1dB) are -28dBm at HG and -20dBm at LC. Biased by an internal gm bias circuit, the power consumptions of the core circuit are 5.7mW and 5.2mW for HG and LG respectively.
引用
收藏
页码：405 / 408
页数：4
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