Electromechanical properties of Nd-doped Bi4Ti3O12 films:: A candidate for lead-free thin-film piezoelectrics

被引：162
作者：
Maiwa, H
Iizawa, N
Togawa, D
Hayashi, T
Sakamoto, W
Yamada, M
Hirano, S
机构：
[1] Shonan Inst Technol, Dept Mat Sci & Engn, Kanagawa 2518511, Japan
[2] Nagoya Univ, Ctr Integrated Res Sci & Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan
[3] Nagoya Univ, Grad Sch Engn, Dept Appl Chem, Chikusa Ku, Nagoya, Aichi 4648603, Japan
来源：
APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 11期
关键词：
D O I：
10.1063/1.1560864
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Neodymium-doped Bi4Ti3O12 (BNT) films are evaluated for use as lead-free thin-film piezoelectrics in microelectromechanical systems. Bi4Ti3O12, Bi3.25La0.75Ti3O12, and Bi3.25Nd0.75Ti3O12 films were fabricated by chemical solution deposition on Pt/TiOx/SiO2/Si substrates. Nd substitution promoted random orientation with low (00l) diffraction peaks. The 1-mum-thick Bi3.25Nd0.75Ti3O12 film annealed at 750 degreesC exhibited a remanent polarization of 26 muC/cm(2). Typical butterfly field-induced strain loops were obtained in the BNT film capacitors. The electrically induced strain is 8.4x10(-4) under the bipolar driving field of 220 kV/cm. These results show that BNT is a promising candidate for use in lead-free thin-film piezoelectrics. (C) 2003 American Institute of Physics.
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页码：1760 / 1762
页数：3
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