Growth and optimization of InAs/GaSb and GaSb/InAs interfaces

被引：6
|
作者：
Tahraoui, A
Tomasini, P
Lassabatère, L
Bonnet, J
机构：
[1] Univ Montpellier 2, STL, UPRESA CNRS 5011, LAIN, F-34095 Montpellier 5, France
[2] Northwestern Univ, ECE Dept, Ctr Quantum Devices, Evanston, IL 60208 USA
来源：
APPLIED SURFACE SCIENCE | 2000年 / 162卷 / 162期
关键词：
InAs; GaSb; MBE; epitaxy; interface; semiconductor;
D O I：
10.1016/S0169-4332(00)00227-0
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
In order to optimize the molecular beam epitaxy growth of indium arsenide-gallium antimonide structures, we study the effects of the stacking sequence of the interfacial monolayer and of the growth temperature. To this end, GaSb/InAs and InAs/GaSb heterojunctions involving ultra-thin epilayers have been fabricated at 350 degrees C, 400 degrees C and 450 degrees C with In-Sb- or Ga-As-like interfaces. The structures have been investigated by reflection high-energy electron diffraction, Anger electron microscopy and atomic force microscopy. The best growth condition for InAs(100) as well as GaSb(100) have been obtained with a substrate temperature of 400 degrees C and an In-Sb-like InAs-GaSb interface. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：425 / 429
页数：5
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